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Machine translation
1. (WO1983002037) SEMICONDUCTOR PHOTOELECTRIC CONVERTER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1983/002037    International Application No.:    PCT/JP1982/000457
Publication Date: 09.06.1983 International Filing Date: 30.11.1982
IPC:
H01L 27/146 (2006.01), H01L 29/423 (2006.01), H01L 29/739 (2006.01), H01L 29/772 (2006.01), H01L 31/112 (2006.01)
Applicants: SEMICONDUCTOR RESEARCH FOUNDATION [JP/JP]; Kawauchi, Sendai-shi, Miyagi 980 (JP) (For All Designated States Except US).
NISHIZAWA, Jun-ichi [JP/JP]; (JP) (For US Only)
Inventors: NISHIZAWA, Jun-ichi; (JP)
Agent: TAMAMUSHI, Kyugoro; 5-2, Minaminagasaki 2-chome, Toshima-ku, Tokyo 171 (JP)
Priority Data:
56/192417 30.11.1981 JP
Title (EN) SEMICONDUCTOR PHOTOELECTRIC CONVERTER
(FR) CONVERTISSEUR PHOTOELECTRIQUE A SEMICONDUCTEURS
Abstract: front page image
(EN)A high-speed, high-sensitivity semiconductor photoelectric converter. For that purpose, a field effect transistor, a static induction type of transistor and a static induction thyristor are employed as fundamental elements, and at least parts of the gate regions are exposed on the surface of the substrate.
(FR)Convertisseur photoélectrique à semiconducteurs à sensibilité élevée et à haute vitesse. Un transistor à effet de champ, un type de transistor à induction statique et un thyristor à induction statique sont utilisés comme éléments de base, et au moins des parties des régions de porte sont exposées à la surface du substrat.
Designated States: US.
European Patent Office (DE, FR, GB, NL).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)