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Machine translation
1. (WO1982003946) METHOD OF FORMING WIDE BANDGAP REGION WITHIN A MULTILAYER III-V SEMICONDUCTORS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1982/003946    International Application No.:    PCT/US1982/000574
Publication Date: 11.11.1982 International Filing Date: 04.05.1982
IPC:
H01L 21/18 (2006.01), H01L 21/265 (2006.01), H01L 21/76 (2006.01), H01S 5/026 (2006.01), H01S 5/20 (2006.01)
Applicants: UNIVERSITY OF ILLINOIS FOUNDATION [US/US]; 224 Illini Union, 1401 West Green Street, Urbana, IL 61801 (US)
Inventors: HOLONYAK, Nick, Jr.; (US).
LAIDIG, Wyn, Davis; (US)
Agent: NOVACK, Martin; P.O. Box 6080, Norwalk, CT 06852 (US)
Priority Data:
260,956 06.05.1981 US
370,756 22.04.1982 US
Title (EN) METHOD OF FORMING WIDE BANDGAP REGION WITHIN A MULTILAYER III-V SEMICONDUCTORS
(FR) PROCEDE PERMETTANT DE FORMER UNE REGION ETENDUE D'ECARTEMENT DE BANDE A L'INTERIEUR DE SEMICONDUCTEURS MULTICOUCHES III.V
Abstract: front page image
(EN)Method for converting a multilayer semiconductor structure (20), that includes active semiconductor regions (22) interposed between semiconductor barrier layers (24), into a disordered alloy by selective introduction of a disordering Zn, Si or As elements or ions into the multilayer structure. The disordered alloy exhibits wider energy band-gap while still retaining single crystallinity. The process is illustratively used to make Schottky barrier field effect transistor (fig. 5), light emitting diode (fig. 3-4) and intergrated electro-optical device (fig. 6).
(FR)Procede permettant de convertir une structure de semiconducteurs multicouches (20), comprenant des regions actives de semiconducteurs (22) placees entre des couches de barriere de semiconducteurs (24), en un alliage desordonne grace a l'introduction selective d'elements perturbateurs ou ions de Zn, Fi ou As dans la structure multicouches. L'alliage desordonne presente un ecartement de bande d'energie plus eleve tout en maintenant une cristallinite unique. Ce procede est utilise, par exemple, dans la fabrication de transistors a effet de champ a barriere Schottky (Fig. 5), des diodes electro-luminescentes (Fig. 3-4) et des dispositifs electro-optiques integres (Fig. 6).
Designated States: JP.
European Patent Office (AT, BE, CH, DE, FR, GB, LU, NL, SE).
Publication Language: English (EN)
Filing Language: English (EN)