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Machine translation
1. (WO1981003572) SEMICONDUCTOR MEMORY PRECHARGE CIRCUIT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1981/003572    International Application No.:    PCT/US1980/000671
Publication Date: 10.12.1981 International Filing Date: 02.06.1980
IPC:
G11C 11/4094 (2006.01), G11C 11/419 (2006.01)
Applicants:
Inventors:
Priority Data:
US80/00671 02.06.1980 WO
Title (EN) SEMICONDUCTOR MEMORY PRECHARGE CIRCUIT
(FR) CIRCUIT DE PRECHARGE DE MEMOIRE A SEMI-CONDUCTEUR
Abstract: front page image
(EN)A semiconductor memory circuit has half digit lines (116, 118) which are connected to a sense amplifier (120). A memory cell (122) produces a voltage offset on a half digit line (116). The sense amplifier (120) pulls the half digit line (116, 118) with the lower voltage to ground. Pull up circuits (126, 128) act to pull the half digit line (116, 118) with the higher voltage up to the supply voltage. After the pull up operation a precharge signal (84) activates a pair of precharge transistors (132, 134) which couple the half digit lines (116, 118) to a common latch node (110). The voltages on the half digit lines (116, 118) equilibrate by current flow through the latch node (110).
(FR)Un circuit de memoire a semi-conducteur possede des demi-lignes numeriques (116, 118) qui sont connectees a un amplificateur de detection (120). Une cellule de memoire (122) produit un decalage de tension sur une demi-ligne numerique (116). L"amplificateur de detection (120) tire la demi-ligne numerique (116, 118) ayant la tension la plus faible a la terre. Des circuits de remontee (126, 128) font remonter la demi-ligne numerique (116, 118) ayant la tension la plus elevee jusqu"a atteindre la tension d"alimentation. Apres l"operation de remontee, un signal de precharge (84) active une paire de transistors de precharge (132, 134) qui couplent les demi-lignes numeriques (116, 118) sur un noeud de bascule commun (110). Les tensions sur les demi-lignes numeriques (116, 118) s"equilibrent par le passage de courant par le noeud de bascule (110).
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)