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Machine translation
1. (WO1981003133) HIGH PRESSURE PLASMA DEPOSITION OF SILICON
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1981/003133    International Application No.:    PCT/US1981/000449
Publication Date: 12.11.1981 International Filing Date: 06.04.1981
IPC:
C23C 16/01 (2006.01), C23C 16/513 (2006.01), C23C 14/22 (2006.01)
Applicants:
Inventors:
Priority Data:
148095 09.05.1980 US
Title (EN) HIGH PRESSURE PLASMA DEPOSITION OF SILICON
(FR) DEPOT DE SILICIUM SOUS PLASMA A HAUTE PRESSION
Abstract: front page image
(EN)Polycrystalline silicon (84) is deposited on the interior surface of a shaped container (40). The silicon is deposited by reacting hydrogen (31) and a silicon bearing gas (30) in the presence of a high pressure plasma (22). The silicon body is separated from the shaped container by utilizing thermal expansion shear stress.
(FR)Du silicium polycristallin (84) est depose sur la surface interieure d'un conteneur de forme (40). Le silicium est depose en faisant reagir de l'hydrogene (31) et un gaz porteur de silicium (30) en presence de plasma a haute pression (22). Le corps de silicium est separe du conteneur a forme par un travail de cisaillement a expansion thermique.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)