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Machine translation
1. (WO1981002949) COMPLEMENTARY FIELD-EFFECT TRANSISTOR INTEGRATED CIRCUIT DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1981/002949    International Application No.:    PCT/US1981/000350
Publication Date: 15.10.1981 International Filing Date: 20.03.1981
IPC:
H01L 27/092 (2006.01)
Applicants:
Inventors:
Priority Data:
138228 07.04.1980 US
Title (EN) COMPLEMENTARY FIELD-EFFECT TRANSISTOR INTEGRATED CIRCUIT DEVICE
(FR) DISPOSITIF A CIRCUIT INTEGRE A TRANSISTOR COMPLEMENTAIRE A EFFET DE CHAMP
Abstract: front page image
(EN)A CMOS integrated circuit structure which is not susceptible to latchup utilizes insulated-gate field-effect transistors having Schottky barrier source and drains (SB-IGFET). In the preferred embodiment, the n-channel device of an adjacent complementary pair of transistors in a CMOS circuit is provided with diffused source (e.g. 42) and drain (e.g. 43) while the p-channel device of the pair is provided with Pt-Si-Si Schottky barrier contact source (e.g. 47) and drain (e.g. 48). Such a structure completely eliminates the parasitic pnpn structure which causes the latchup problem in conventional CMOS structures.
(FR)Une structure a circuit integre a (CMOF) qui n'est pas susceptible de presenter de probleme de verrouillage utilise des transistors a effet de champ a porte isolee possedant une source et des drains a barriere Chottky (FB-IGSET). Dans un mode de realisation preferentiel, le dispositif a (n-canaux) d'une paire adjacente complementaire de transistors dans un circuit (CMOS) est pourvu d'une source (par exemple 42) et d'un drain par exemple (43) diffuses tandis que le dispositif a p-canaux de la paire est pourvu d'une source de contact (par exemple 47) et d'un drain (par exemple 48) a barriere Chottky (PpFi-Si). Une telle structure permet d'eliminer completement la structure parasite (pnpn) qui provoque le probleme de verrouillage dans les structures conventionnelles (CMOS).
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)