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Machine translation
1. (WO1981002810) ELECTRICALLY ERASABLE MOSFET STORAGE DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1981/002810    International Application No.:    PCT/US1980/000654
Publication Date: 01.10.1981 International Filing Date: 22.05.1980
IPC:
G11C 16/14 (2006.01), H01L 29/788 (2006.01)
Applicants:
Inventors:
Priority Data:
130853 17.03.1980 US
Title (EN) ELECTRICALLY ERASABLE MOSFET STORAGE DEVICE
(FR) DISPOSITIF DE STOCKAGE MOSFET EFFACABLE ELECTRIQUEMENT
Abstract: front page image
(EN)A field effect transistor storage device for use in programmable read-only memories of the type employing a floating gate (16) and a control gate (20) overlying and aligned with the floating gate. An erase gate (24) is provided adjacent at least one edge (26) of the floating gate (16) for removing charge stored on the floating gate. A method of electrically erasing the storage device includes holding the control gate (20) at a fixed potential to thereby hold the floating gate (16) at a substantially fixed potential while a relatively low voltage is applied to the erase gate (24) to remove charge stored on the floating gate.
(FR)Un dispositif de stockage de transistors a effet de champ utilise dans des memoires mortes programmables du type utilisant une porte flottante (16) et une porte de commande (20) surjacente et en alignement avec la porte flottante. Une porte d"effacement (24) est prevue adjacente a au moins un bord (26) de la porte flottante (16) pour enlever des charges stockees sur la porte flottante. Un procede d"effacement electrique du dispositif de stockage consiste a maintenir la porte de commande (20) a un potentiel fixe de maniere a tenir la porte flottante (16) a un potentiel sensiblement fixe tandis qu"une tension relativement faible est appliquee a la porte d"effacement (24) pour enlever les charges stockees sur la porte flottante.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)