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Machine translation
1. (WO1981002493) SELF-ALIGNED BURIED CONTACT AND METHOD OF MAKING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1981/002493    International Application No.:    PCT/US1980/000660
Publication Date: 03.09.1981 International Filing Date: 22.05.1980
IPC:
H01L 21/74 (2006.01), H01L 21/762 (2006.01), H01L 27/108 (2006.01), H01L 29/08 (2006.01)
Applicants:
Inventors:
Priority Data:
123848 22.02.1980 US
Title (EN) SELF-ALIGNED BURIED CONTACT AND METHOD OF MAKING
(FR) CONTACT NOYE A AUTO-ALIGNEMENT ET PROCEDE DE FABRICATION
Abstract: front page image
(EN)A buried contact (44) to the active region of an MOS device is formed by initially defining the channel region and contact region by a nitride layer (16) on a semiconductor substrate (10) of a first conductivity type. The substrate (10) is doped in a third region (22) between the contact and channel regions with a dopant of a second conductivity. Thick oxide (28) is then grown over the third region. The nitride is then removed from the channel and contact regions and thin oxide (30) is formed over the channel region. A conductor (32, 34), preferably polycrystalline silicon, is then formed over the channel and contact regions. The contact region of the substrate is then doped with a material of the second conductivity type, preferably through the polycrystalline silicon layer.
(FR)Un contact noye (44) d"acces a la region active d"un dispositif MOS est forme en definissant initialement la region de canal et la region de contact par une couche de nitrure (16) sur un substrat semi-conducteur (10) d"un premier type de conductivite. Le substrat (10) est dope dans une troisieme region (22) situee entre les region de contact et de canal avec un dopant d"un second type de conductivite. Une couche epaisse d"oxyde (28) est ensuite formee au-dessus de la troisieme region. Le nitrure est ensuite enleve des regions de canal et de contact et une couche fine d"oxyde (30) est ensuite formee au-dessus de la region de canal. On forme ensuite au-dessus des regions de canal et de contact un conducteur (32, 34), de preference en silicium polycristallin. La region de contact du substrat est ensuite dopee avec un materiau du second type de conductivite, de preference a travers la couche de silicium polycristallin.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)