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Machine translation
1. (WO1981002222) COMPOSIT GATE INTERCONNECT STRUCTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1981/002222    International Application No.:    PCT/US1980/000652
Publication Date: 06.08.1981 International Filing Date: 22.05.1980
IPC:
H01L 21/768 (2006.01), H01L 21/8234 (2006.01), H01L 23/532 (2006.01), H01L 29/49 (2006.01)
Applicants:
Inventors:
Priority Data:
113660 21.01.1980 US
Title (EN) COMPOSIT GATE INTERCONNECT STRUCTURE
(FR) STRUCTURE COMPOSITE D"INTERCONNEXION/PORTE
Abstract: front page image
(EN)A composit gate/interconnect structure (36) is formed by interleaved layers of polycrystalline silicon (28) and a refractory metal (26) selected from the group consisting of molybdenum, tungsten, platinum and titanium. The combination of a refractory metal such as molybdenum with polycrystalline silicon produces a stable gate material having low resistivity which can be formed by simple fabrication processes in the construction of high speed MOS devices.
(FR)Une structure composite porte/interconnexion (36) est formee par des couches intercalees de silicium polycristallin (28) et d"un metal refractaire (26) selectionne parmi le groupe comprenant le molybdene, le tungstene, le platine et le titane. La combinaison d"un metal refractaire tel que du molybdene avec du silicium polycristallin produit un materiau de porte stable ayant une faible resistivite qui peut etre formee par des procedes de fabrication simples pour la construction de dispositifs MOS de grande vitesse.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)