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Machine translation
1. (WO1981001485) NARROW CHANNEL FIELD EFFECT SEMICONDUCTOR DEVICES AND METHODS FOR MAKING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1981/001485    International Application No.:    PCT/US1980/001523
Publication Date: 28.05.1981 International Filing Date: 12.11.1980
IPC:
H01L 21/28 (2006.01), H01L 21/8234 (2006.01), H01L 29/78 (2006.01)
Applicants:
Inventors:
Priority Data:
94121 14.11.1979 US
Title (EN) NARROW CHANNEL FIELD EFFECT SEMICONDUCTOR DEVICES AND METHODS FOR MAKING
(FR) DISPOSITIFS A SEMI-CONDUCTEURS A EFFET DE CHAMP A CANAUX ETROITS ET PROCEDE DE FABRICATION DE CEUX-CI
Abstract: front page image
(EN)A pair of narrow channel IGFET devices (10A, 10B) having separate insulated gate electrode structures (19A, 19B) formed over narrow channel regions (28A, 28B) of a substrate (11) flanking a central enhancement region (27). Methods of forming the narrow channel regions using a single photolithography step and forming separate gate electrode structures overlying each using alternative processes, each generally involving two photolithography steps, are set forth.
(FR)Une paire de dispositifs a IGFET a canaux etroits (10A, 10B) possedant des structures d'electrodes de portes isolees et separees (19A, 19B) formees sur des regions a canaux etroits (28A, 28B) d'un substrat (11) dispose a cote d'une region centrale d'enrichissement (27). Des methodes de formage des regions a canaux etroits utilisant une simple etape de photolithographie et formant des structures d'electrodes de portes separees se recouvrant, chacune utilisant des procedes alternatifs, chacune entrainant generalement deux etapes de photolithographie sont decrites.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)