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Machine translation
1. (WO1981001484) SEMICONDUCTOR MEMORY DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1981/001484    International Application No.:    PCT/JP1980/000276
Publication Date: 28.05.1981 International Filing Date: 06.11.1980
IPC:
G11C 16/04 (2006.01), H01L 23/522 (2006.01), H01L 27/115 (2006.01), H01L 29/78 (2006.01), H01L 29/788 (2006.01), H03K 3/356 (2006.01)
Applicants:
Inventors:
Priority Data:
79/146167 12.11.1979 JP
Title (EN) SEMICONDUCTOR MEMORY DEVICE
(FR) DISPOSITIF DE MEMOIRE A SEMI-CONDUCTEUR
Abstract: front page image
(EN)A semiconductor memory device composed of double gate-type field effect transistors, each of which has a control gate (25), and a floating gate (23) that stores electric charges. The semiconductor memory device requires an arrangement of reciprocal structures, namely a structure adapted to inject charges into the floating gate of the memory device, and a structure adapted to read-out the stored information. To this end, the device employs an injection-only transistor (TrW) with a structure adapted for charge-injection and a read-only transistor (TrR) with a structure adapted for reading, the floating gates (23) of both the transistors being electrically coupled to each other, the control gates (25) thereof being connected to a first common signal-wire, the drains (22W, 22R) thereof being connected to second-and third- different signalwires, respectively, and the sources (21W, 21R) thereof being grounded.
(FR)Le dispositif de memoire a semi-conducteur se compose de transistors doubles a effet de champ du type a portes, chacun d"eux possedant une porte de commande (25), et une porte flottante (23) qui emmagasine les charges electriques. Le dispositif de memoire a semi-conducteur demande une disposition de structures reciproques, en particulier une structure adaptee pour injecter des charges dans la porte flottante du dispositif de memoire, et une structure adaptee pour sortie les informations stockees. A cet effet, le dispositif utilise un transistor d"injection seulement (TrW) avec une structure adaptee pour l"injection de charges et un transistor de lecture seulement (TrR) avec une structure adaptee a la lecture, les portes flottantes (23) des deux transistors etant couplees electriquement entre elles, leurs portes de commande (25) etant connectees a un premier cable de signaux commun, leurs debits (22W, 22R) etant connectes a des second et troisieme cables-signaux differents, respectivement, et leurs sources (21W, 21R) etant mises a la terre.
Designated States:
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)