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Machine translation
1. (WO1981001073) SEMICONDUCTOR DEVICES CONTROLLED BY DEPLETION REGIONS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1981/001073    International Application No.:    PCT/US1980/001234
Publication Date: 16.04.1981 International Filing Date: 24.09.1980
IPC:
H01L 29/10 (2006.01), H01L 29/808 (2006.01)
Applicants:
Inventors:
Priority Data:
83092 09.10.1979 US
Title (EN) SEMICONDUCTOR DEVICES CONTROLLED BY DEPLETION REGIONS
(FR) DISPOSITIFS SEMICONDUCTEURS COMMANDES PAR DES REGIONS D"APPAUVRISSEMENT
Abstract: front page image
(EN)A field effect semiconductor device and method of controlling the device by merged depletion regions are provided. The device includes, in combination, first (22) and second (24) spaced apart PN junctions. Depletion regions (36, 38 and 40, 42) associated with the junctions have boundaries displaced from their respective junctions as a function of the doping concentration on either side of the junctions. The junctions are spaced apart by a distance with allows overlap of the depletion regions (38, 40) positioned therebetween. By applying a reverse bias to one (22) of the PN junctions the conductivity on the side (34) of the second PN junction (24) remote from the first PN junction (22) can be varied through the effect of merged depletion regions.
(FR)Dispositifs semiconducteurs a effet de champ et procede de commande du dispositif par des regions d"appauvrissement fusionnees. Le dispositif comprend, en combinaison, une premiere (22) et une seconde (24) jonctions PN espacees entre elles. Des regions d"appauvrissement (36, 38 et 40, 42) associees aux jonctions ont des frontieres deplacees de leurs jonctions respectives en fonction de la concentration de dopage de chaque cote des jonctions. Les jonctions sont espacees entre elles d"une distance qui permet le chevauchement des regions d"appauvrissement (38, 40) positionnees entre elles. En appliquant une polarisation inverse a l"une (22) des jonctions PN, on peut modifier la conductivite du cote (34) de la seconde jonction PN (24) eloignee de la premiere jonction PN (22) par l"effet des regions d"appauvrissement fusionnees.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)