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Machine translation
1. (WO1981000420) HIGH CAPACITY ETCHING APPARATUS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1981/000420    International Application No.:    PCT/US1980/000927
Publication Date: 19.02.1981 International Filing Date: 25.07.1980
IPC:
H01J 37/34 (2006.01)
Applicants:
Inventors:
Priority Data:
65185 09.08.1979 US
Title (EN) HIGH CAPACITY ETCHING APPARATUS
(FR) APPAREIL D"ATTAQUE CHIMIQUE DE GRANDE CAPACITE
Abstract: front page image
(EN)Apparatus for sputter etching or reactive sputter etching of semiconductor wafers comprises a-c excited concentric electrodes. In one embodiment the inner electrode (24) has the smaller surface area and constitutes a cathode electrode. In another embodiment the inner electrode (236) has a plurality of vanes and the outer electrode (210) has the smaller surface area and constitutes the cathode electrode. In either case the workpieces are mounted on the cathode electrode.
(FR)Appareil d"attaque chimique par bombardement de tranches de semi-conducteur comprenant des electrodes concentriques excitees par un courant alternatif. Dans un mode de realisation l"electrode interne (24) possede la plus petite region superficielle et constitue une electrode cathodique. Dans un autre mode de realisation, l"electrode interne (236) possede une pluralite d"ailettes et l"electrode externe (210) possede la plus petite region de surface et constitue l"electrode cathodique. Dans les deux cas les pieces a usiner sont montees sur l"electrode cathodique.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)