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Machine translation
1. (WO1981000327) LASER ANNEALED DOUBLE CONDUCTOR STRUCTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1981/000327    International Application No.:    PCT/US1980/000918
Publication Date: 05.02.1981 International Filing Date: 23.07.1980
IPC:
H01L 21/268 (2006.01), H01L 21/28 (2006.01), H01L 21/321 (2006.01), H01L 21/768 (2006.01)
Applicants:
Inventors:
Priority Data:
60082 24.07.1979 US
Title (EN) LASER ANNEALED DOUBLE CONDUCTOR STRUCTURE
(FR) STRUCTURE A DOUBLE CONDUCTEUR RECUITE AU LASER
Abstract: front page image
(EN)In double conductor micro-electronic structures (3), prior to the low temperature deposition or growth of an insulating layer (8) over a polycrystalline conductor surface (4), is annealed using a beam of radiant energy, which causes it to become very smooth, thereby removing any surface spikes. The insulating layer placed thereover has remarkably improved insulation qualities heretofore unattainable at low temperatures. The beam of radiant energy is preferably applied in bursts of energy lasting for a sufficiently short duration so that implanted impurities in the silicon substrate do not redistribute.
(FR)Dans des structures microelectroniques a double conducteur (3), avant le depot ou croissance a basse temperature d"une couche isolante (8) sur une surface conductrice polycristalline (4), cette derniere est recuite en utilisant un rayon d"energie radiante, ce qui la rend tres douce, enlevant ainsi les pointes eventuelles sur la surface. La couche isolante placee sur cette surface possede des qualites d"isolation considerablement ameliorees qui n"ont pas ete obtenues jusqu"a present a de basses temperatures. Le rayon d"energie radiante s"applique de preference par bouffees d"energie d"une duree suffisamment courte de sorte que des impuretes implantees dans le substrat de silicium ne se redistribuent pas.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)