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Machine translation
1. (WO1981000171) METHOD FOR FORMING VOLTAGE-INVARIANT CAPACITORS FOR MOS TYPE INTEGRATED CIRCUIT DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1981/000171    International Application No.:    PCT/US1980/000803
Publication Date: 22.01.1981 International Filing Date: 23.06.1980
IPC:
H01L 21/02 (2006.01), H01L 27/06 (2006.01)
Applicants:
Inventors:
Priority Data:
55170 06.07.1979 US
Title (EN) METHOD FOR FORMING VOLTAGE-INVARIANT CAPACITORS FOR MOS TYPE INTEGRATED CIRCUIT DEVICE
(FR) METHODE DE FORMATION DE CONDENSATEUR D"INVARIANT-TENSION POUR UN DISPOSITIF A CIRCUIT INTEGRE MOS
Abstract: front page image
(EN)For an integrated circuit semiconductor device (10) having a multiplicity of MOSFET elements, (14-16-18) voltage-invariant capacitors, each with metal (38) as one plate and either polysilicon (22) or source-drain diffusion as the second plate, are created by regrowing a thin oxide layer (34) to provide the dielectric of the capacitor during the normal MOSFET processing sequence.
(FR)Pour un dispositif semi-conducteur a circuit integre (10) ayant une pluralite d"elements MOSFET, des condensateurs d"invariant-tension (14-16-18), ayant chacun un metal (38) comme premiere plaque et soit du polysilicium (22) soit une diffusion de drainage de source comme seconde plaque sont crees en reformant une fine couche d"oxyde (34) pour produire le dielectrique du condensateur pendant la sequence normale de traitement MOSFET.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)