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Machine translation
1. (WO1980002605) MASK STRUCTURE FOR X-RAY LITHOGRAPHY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1980/002605    International Application No.:    PCT/US1980/000533
Publication Date: 27.11.1980 International Filing Date: 09.05.1980
IPC:
G03F 1/22 (2012.01), H01L 21/30 (2006.01)
Applicants:
Inventors:
Priority Data:
41730 23.05.1979 US
Title (EN) MASK STRUCTURE FOR X-RAY LITHOGRAPHY
(FR) STRUCTURE DE MASQUE POUR LITHOGRAPHIE A RAYONS X
Abstract: front page image
(EN)A mask substrate for use in an x-ray lithographic system comprises a boron nitride member (32, Fig. 2) coated with a polyimide layer (20) whose thickness is approximately the same as that of the boron nitride member. The substrate is mechanically strong and both optically and x-ray transparent. Mask patterns formed on the substrate are characterized by low distortion and a low defect density.
(FR)Un substrat de masque utilise dans un systeme lithographique a rayons X comprend un organe en nitrure de bore (32, Fig. 2) revetu d"une couche de polyimide (20) dont l"epaisseur est approximativement la meme que celle de l"organe en nitrure de bore. Le substrat est mecaniquement resistant et transparent optiquement ainsi qu"aux rayons X. Des configurations de masques formees sur le substrat se caracterisent par une faible distorsion et une faible densite de defauts.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)