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Machine translation
1. (WO1980001978) SOLID STATE DEVICES BY DIFFERENTIAL PLASMA ETCHING OF RESISTS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1980/001978    International Application No.:    PCT/US1980/000200
Publication Date: 18.09.1980 International Filing Date: 28.02.1980
IPC:
G03F 7/033 (2006.01), G03F 7/36 (2006.01), H01L 21/311 (2006.01)
Applicants:
Inventors:
Priority Data:
19711 12.03.1979 US
Title (EN) SOLID STATE DEVICES BY DIFFERENTIAL PLASMA ETCHING OF RESISTS
(FR) DISPOSITIFS A SEMI-CONDUCTEURS PAR ATTAQUE CHIMIQUE DIFFERENTIELLE AU PLASMA DES RESERVES
Abstract: front page image
(EN)Production of solid state devices by a process which includes at least one pattern delineation step involving dry etching of a negative resist deposited as a film on a substrate and obtained by mixing a host polymer with one or more monomers capable of being locked into place by electromagnetic radiation. The film is selectively irradiated, fixed, for example by heating or vacuum or both, to remove unlocked monomer or monomers from the film, and etched by means of an oxygen-containing plasma. The rate of removal is higher in the unirradiated region than in the irradiated region, yielding a negative resist pattern. A sensitizer may be added to allow use of various radiation wavelengths. Desirable properties of monomer and host polymer materials are discussed, and exemplary specific compositions given of aromatic monomers, silicon-containing monomers, and chlorinated polymers.
(FR)Production de dispositifs a semi-conducteurs par un procede qui comprend au moins le tracage d"une configuration par attaque a sec d"une reserve negative deposee sous forme d"une pellicule sur un substrat et obtenue en melangeant un polymere hote avec un ou plusieurs monomeres capables d"etre verrouilles sur place par radiation electromagnetique. La pellicule est selectivement irradiee, fixee, par exemple par chauffage ou vide, ou les deux, pour enlever le ou les monomeres deverrouilles du film, et attaquee au moyen d"un plasma contenant de l"oxygene. Le taux de degagement est superieur dans la region non-irradiee que dans la region irradiee, donnant ainsi la configuration d"une reserve negative. Un sensibilisateur peut etre ajoute pour permettre l"utilisation de plusieurs longueurs d"ondes de radiation. Des proprietes desirables de materiaux monomeres et polymeres hotes sont revelees, et on donne des compositions specifiques exemplaires de monomeres aromatiques, de monomeres contenant du silicone, et des polymeres chlorines.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)