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Machine translation
1. (WO1980001968) DIELECTRICALLY ISOLATED HIGH VOLTAGE SEMICONDUCTOR DEVICES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1980/001968    International Application No.:    PCT/US1980/000207
Publication Date: 18.09.1980 International Filing Date: 03.03.1980
IPC:
H01L 21/314 (2006.01), H01L 21/762 (2006.01), H01L 27/08 (2006.01), H01L 29/739 (2006.01), H01L 29/8605 (2006.01)
Applicants:
Inventors:
Priority Data:
20217 14.03.1979 US
Title (EN) DIELECTRICALLY ISOLATED HIGH VOLTAGE SEMICONDUCTOR DEVICES
(FR) DISPOSITIFS SEMI-CONDUCTEURS A HAUTE TENSION ISOLES DIELECTRIQUEMENT
Abstract: front page image
(EN)Structure for achieving closely spaced high voltage devices in integrated circuits. The devices are formed in monocrystalline tubs (11) in a polycrystalline substrate (10). To prevent the potential of the substrate from causing breakdown of the devices, there is included between the single crystalline tubs and the polycrystalline substrate a semi-insulating layer (13) which has trapping states capable of taking on charge From the monocrystalline region. The shielding provided by the semi-insulating layer permits the surface regions of the device to be made closer to the polycrystalline substrate and the tubs to be made more shallow.
(FR)Structure permettant d"obtenir des dispositifs a haute tension espaces etroitement dans des circuits integres. Les dispositifs sont formes dans des baquets ("tubs") monocristallins (11) dans un substrat polycristallin. Pour empecher le potentiel du substrat de provoquer la rupture des dispositifs, on incorpore entre les baquets monocristallins et le substrat polycristallin une couche semi-isolante (13) qui possede des etats de piegeage capables de prendre la charge provenant de la region monocristalline. La protection assuree par la couche semi-isolante permet de faire les regions superficielles du dispositif plus pres du substrat polycristallin et les baquets moins profonds.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)