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Machine translation
1. (WO1980001740) METHOD OF PRODUCING SEMICONDUCTOR DEVICES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1980/001740    International Application No.:    PCT/JP1979/000040
Publication Date: 21.08.1980 International Filing Date: 19.02.1979
IPC:
H01L 21/318 (2006.01)
Applicants:
Inventors:
Priority Data:
JP79/00040 19.02.1979 WO
Title (EN) METHOD OF PRODUCING SEMICONDUCTOR DEVICES
(FR) PROCEDE DE PREPARATION DE DISPOSITIFS SEMI-CONDUCTEURS
Abstract: front page image
(EN)A method of producing a semiconductor device includes the step of subjecting a silicon substrate to a direct nitriding to thereby produce a silicon nitride film. A reaction tubular vessel for carrying out the direct nitriding is first heated up to a predetermined reaction temperature and filled with an ammonia gas or a mixture gas of the ammonia gas and an inert gas. Subsequently arranged in the vessel is the silicon substrate on which the silicon nitride film is directly produced by a heat nitriding reaction. This nitriding reaction may be commenced as soon as the silicon substrate in the vessel is rapidly heated up to the reaction temperature so that the undesirable oxidation due to oxidizable impurities is avoided. The dense silicon nitride film thus produced is available for surface-protecting films for the semiconductor devices.
(FR)Procede de preparation de dispositifs semi-conducteurs comprenant l"etape de nitruration directe d"un substrat de silicium afin de former un film de nitrure de silicium. Un recipient de reaction tubulaire pour effectuer la nitruration directe est premierement chauffe jusqu"a une temperature predeterminee de reaction et rempli d"ammoniac gazeux ou d"un melange gazeux de gaz ammoniac et d"un gaz inerte. Le substrat de silicium sur lequel le film de nitrure de silicium est directement produit par une reaction de nitruration par la chaleur est ensuite depose dans le recipient. Cette reaction de nitruration peut commencer aussitot que le substrat de silicium dans le recipient est rapidement chauffe a la temperature de reaction afin d"eviter l"oxydation indesirable due aux impuretes oxydables. Le film dense de nitrure de silicium ainsi produit est utilisable pour des films de protection de surface pour des dispositifs semi-conducteurs.
Designated States:
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)