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Machine translation
1. (WO1980001624) REDUCTION OF SURFACE RECOMBINATION CURRENT IN GAAS DEVICES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1980/001624    International Application No.:    PCT/US1980/000048
Publication Date: 07.08.1980 International Filing Date: 21.01.1980
IPC:
H01L 21/033 (2006.01), H01L 21/314 (2006.01), H01L 29/06 (2006.01)
Applicants:
Inventors:
Priority Data:
7790 30.01.1979 US
Title (EN) REDUCTION OF SURFACE RECOMBINATION CURRENT IN GAAS DEVICES
(FR) REDUCTION DU COURANT DE RECOMBINAISON EN SURFACE DANS DES DISPOSITIFS GAAS
Abstract: front page image
(EN)Surface recombination current in GaAs devices is reduced by means of a semi-insulating oxygen, iron or chromium doped monocrystalline layer of AlGaAs grown by MBE. The AlGaAs layer is grown on a GaAs body (10) and is then masked. Application, for example by diffusion or ion implantation of suitable impurities through a window in the mask (18) converts the exposed portions (16.2) of the AlGaAs layer (16) to low resistivity and modifies the conductivity of the underlying zone of the GaAs body (10). The peripheral portion (16.1) of the AlGaAs layer, however, remain semi-insulating and are effective to reduce the surface recombination velocity - diffusion length product by more than an order of magnitude.
(FR)On reduit le courant de recombinaison en surface dans des dispositifs GaAs au moyen d"une couche semi-isolante, monocristalline dopee a l"oxygene, le fer ou le rayon moleculaire). La couche AlGaAs est developpee sur un corps GaAs (10) puis est masquee. Application par exemple, par diffusion ou implantation d"ions d"impuretes appropriees au travers d"une fenetre dans le masque (18) convertit les partes exposees de la couche d"AlGaAs (16) a une faible resistivite et modifie la conductivite de la zone sous-jacente du corps GaAs (10). Les parties peripheriques (16.1) de la couche AlGaAs, cependant, restent semi-isolantes et sont efficaces pour reduire le produit vitesse de recombinaison superficielle - longueur de diffusion de plus d"un ordre de grandeur.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)