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Machine translation
1. (WO1980001363) LPCVD SYSTEMS HAVING IN SITU PLASMA CLEANING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1980/001363    International Application No.:    PCT/US1979/001127
Publication Date: 10.07.1980 International Filing Date: 27.12.1979
IPC:
C23C 16/44 (2006.01), H01J 37/32 (2006.01)
Applicants:
Inventors:
Priority Data:
974415 29.12.1978 US
Title (EN) LPCVD SYSTEMS HAVING IN SITU PLASMA CLEANING
(FR) SYSTEMES LPCVD POSSEDANT UN NETTOYAGE AU PLASMA /IN SITU
Abstract: front page image
(EN)Process for cleaning wall deposits from a furnace tube (11) used in a low pressure chemical vapor film deposition system (10). The cleaning of the tube is carried out in situ in the furnace by creating a deposit etching plasma within the tube. The plasma is generated by introducing a suitable gas into the tube and applying RF energy to elements (32) located along selected portions of the tube for coupling the RF energy to the gas.
(FR)Procede de nettoyage de depots se forant sur les parois d"un tube de fourneau (11) utilise dans un systeme a depot de pellicules de vapeurs chimiques a basse pression (10). Le nettoyage du tuyau s"effectue in situ dans le four en creant un plasma d"attaque chimique du depot dans le tube. Le plasma est produit en introduisant un gaz approprie dans le tube et en appliquant une energie (RF) aux elements (32) situes le long de parties determinees du tube pour accoupler l"energie (RF) au gaz.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)