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Machine translation
1. (WO1980001346) HIGH POWER AMPLIFIER/SWITCH USING GATED DIODE SWITCH
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1980/001346    International Application No.:    PCT/US1979/001072
Publication Date: 26.06.1980 International Filing Date: 12.12.1979
IPC:
H01L 29/739 (2006.01), H03K 17/10 (2006.01), H03K 17/567 (2006.01), H03K 17/785 (2006.01)
Applicants:
Inventors:
Priority Data:
972025 20.12.1978 US
Title (EN) HIGH POWER AMPLIFIER/SWITCH USING GATED DIODE SWITCH
(FR) AMPLIFICATEUR/COMMUTATEUR A HAUTE TENSION UTILISANT UN COMMUTATEUR AVEC DIODE A PORTE
Abstract: front page image
(EN)A high voltage and current capability amplifier/switch (A) circuit which utilizes the combination of a photosensitive Darlington pair of bipolar transistors (Q1, Q2) a gated diode switch (GDS) and a level shifting circuit means (LS) consisting of two diodes (D1, D2), to achieve an all solid-state replacement for many of today"s high voltage and current mechanical relays.
(FR)Un amplificateur/commutateur ayant la faculte d"utiliser une haute tension et intensite elevee qui emploie la combinaison d"une paire de transistors bipolaires photo-sensibles de Darlington (Q1, Q2), un commutateur a diode a porte et des moyens de circuit de deplacement de niveau (LS) consistant en deux diodes (D1, D2) permet de remplacer par un circuit integre total plusieurs des relais mecaniques actuels a haute tension et intensite elevee.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)