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Machine translation
1. (WO1980001336) A DEMULTIPLEXING PHOTODETECTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1980/001336    International Application No.:    PCT/US1979/001030
Publication Date: 26.06.1980 International Filing Date: 04.12.1979
IPC:
H01L 27/15 (2006.01), H01L 31/11 (2006.01), H01L 31/12 (2006.01)
Applicants:
Inventors:
Priority Data:
969346 14.12.1978 US
Title (EN) A DEMULTIPLEXING PHOTODETECTOR
(FR) PHOTO DETECTEUR DE DEMULTIPLEXAGE
Abstract: front page image
(EN)A 3-terminal totally integrated demultiplexing photodiode wherein information present simultaneously at two wavelengths can be developed into two separate currents available at the three terminals. Two quaternary n-type layers (103 and 105) of indium gallium arsenide phosphide having unequal bandgaps and each having a pn junction are separated by a layer (104) of n-type indium phosphide. The device is oriented so as to present the incoming radiation first to the quaternary layer having the larger bandgap and then to the quaternary layer having the lower bandgap. One of the contacts (111) is attached to the top layer (106) of n-type indium phosphide, a second contact (112) is attached to a central p-type region (110) established in the top layer of indium phosphide and penetrating through to the top quaternary layer, and the third contact (113 or 302) is connected either to the indium phosphide substrate (101) or to a p-type outer region (301) that surrounds all of the layers. By reversing the dc potential applied to the junctions in the quaternary layers, a dual-wavelength light emitting diode is provided.
(FR)Dans une photo-d"iode de demultiplexage totalement integree a trois bornes une information presente simultanement en deux longueurs d"ondes peut etre developpee en deux courants separes disponibles en trois bornes. Deux couches quaternaires du type n (103 et 105) d"arseniure phosphure d"indium gallium ayant des espaces de bandes inegaux et ayant chacune une jonction pn sont separees par une couche (104) de phosphure d"indium du type n. Le dispositif est oriente de maniere a presenter le rayonnement d"arrivee d"abord a la couche quaternaire ayant l"espace de bandes le plus grand puis a la couche quaternaire ayant l"espace de bande le plus bas. Un des contacts (111) est relie a la couche superieure (106) de phosphure d"indium du type n, un second contact (112) est relie a une region centrale du type p (110) etabli dans la couche superieure de phosphure d"indium et penetrant au travers jusqu"a la couche quaternaire superieure, et le troisieme contact (113 ou 302) est connecte soit au substrat de phosphure d"indium (101) soit a une region externe du type p (301) qui entoure toutes les couches. En inversant le potentiel de courant continu applique aux jonctions dans les couches quaternaires, on obtient une diode a emission lumineuse a deux longueurs d"ondes.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)