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Pub. No.:    WO/1980/001334    International Application No.:    PCT/DE1979/000145
Publication Date: 26.06.1980 International Filing Date: 11.12.1979
H01L 21/304 (2006.01), H01L 21/78 (2006.01), H01L 25/07 (2006.01), H01L 27/08 (2006.01)
Priority Data:
2855972 23.12.1978 DE
Abstract: front page image
(EN)The semiconductor device, formed by two diodes mounted in a top to bottom configuration, has a semiconductor body comprised of a base region (1) of a conductivity type and two areas arranged each on either side of the base region. Each area (2, 3) forms with the base region a junction (pn) (J1 J2), and hence a diode structure (1, 2), and are set off with respect to each other. The main surfaces, each formed by the base region and by one of the areas, are provided with a contact metal layer (6, 7) for the electric connection of the two diodes. During manufacture, a stratification of three areas with each time an intermediary pn is formed from a semiconductor disc of a type of conductivity and using a diffusion technique. Then, by means of a mask and in each main surface of the disc, parallel grooves are formed by removal of material up to the respective pn junction so as to obtain a scored structure, the scores of one face of the disk being set off with respect to those of the other face. Both surfaces are metallised and the disc is subdivided into semiconductor devices along the grooves.
(FR)Le dispositif semiconducteur, forme de deux diodes montees tete-beche, presente un corps semiconducteur constitue d"une region de base (1) d"un type de conductivite et de deux zones disposees chacune d"un cote de la region de base. Chaque zone (2, 3) forme avec la region de base une jonction pn (J1, J2), et partant une structure de diode (I, II), et est decalee par rapport a l"autre. Les surfaces principales, formees chacune par la region de base et une des zones, sont munies d"une couche metallique de contact (6, 7) pour la liaison electrique des deux diodes. Lors de la fabrication, on forme par diffusion, a partir d"un disque semiconducteur d"un type de conductivite, une stratification de trois zones avec a chaque fois une jonction pn intermediaire. Ensuite, a l"aide d"un masquage et dans chaque surface principale du disque, on forme des cannelures paralleles par enlevement de matiere jusqu"au dessus de la jonction pn respective, ceci de maniere a obtenir une structure striee, les stries d"un cote du disque etant decalees par rapport a celles de l"autre cote. Les deux surfaces sont metallisees et le disque est subdivise en dispositifs semiconducteurs le long des cannelures.
Designated States:
Publication Language: German (DE)
Filing Language: German (DE)