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Machine translation
1. (WO1980001333) SEMICONDUCTOR DEVICE PRODUCTION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1980/001333    International Application No.:    PCT/US1979/001017
Publication Date: 26.06.1980 International Filing Date: 26.11.1979
IPC:
C30B 13/02 (2006.01), H01L 21/24 (2006.01)
Applicants:
Inventors:
Priority Data:
970031 15.12.1978 US
Title (EN) SEMICONDUCTOR DEVICE PRODUCTION
(FR) PRODUCTION D"UN DISPOSITIF SEMI-CONDUCTEUR
Abstract: front page image
(EN)A thermal gradient zone melting technique is provided for eliminating distortion of the migrated metal pattern (24) by including a peripheral ring of the metal (22) adjacent the edge of the semiconductor wafer.
(FR)Une technique de fusion de zone de gradient thermique elimine la distorsion du motif metallique de migration (24) en incluant un anneau peripherique du metal (22) adjacent au bord de la tranche a semi-conducteur.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)