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Machine translation
1. (WO1980001122) SEMICONDUCTOR MEMORY DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1980/001122    International Application No.:    PCT/US1979/001025
Publication Date: 29.05.1980 International Filing Date: 26.11.1979
IPC:
G11C 16/04 (2006.01), H01L 29/10 (2006.01), H01L 29/792 (2006.01)
Applicants:
Inventors:
Priority Data:
964014 27.11.1978 US
Title (EN) SEMICONDUCTOR MEMORY DEVICE
(FR) DISPOSITIF MEMOIRE SEMI-CONDUCTEUR
Abstract: front page image
(EN)A low voltage write non-volatile MNOSFET memory device preferably of n-channel type has a first relatively highly doped p+ channel region (27) and a second underlying less highly doped p- region (28). The device is written to a "1" state by applying a low voltage (+12V) to the gate (21) and simultaneously applying a suitable voltage to the source (12) and/or the drain (13) to induce avalanche breakdown in the channel.
(FR)Un dispositif memoire MNOFFET remanente a ecriture a faible tension de preference du type a canaux (n) possede une premiere region de canaux (p+) relativement hautement dopee (27) et une seconde region (p-) sous-jacente moins dopee (28). Le dispositif est ecrit a l"etat "1" en appliquant une faible tension (+ 12V) a une porte (21) et en appliquant simultanement une tension appropriee a la source (12) et/ou au drainage (13) pour induire la rupture d"avalanche dans le canal.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)