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Machine translation
1. (WO1980001119) ROM MEMORY CELL WITH 2N FET CHANNEL WIDTHS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1980/001119    International Application No.:    PCT/US1979/000989
Publication Date: 29.05.1980 International Filing Date: 16.11.1979
IPC:
G11C 11/56 (2006.01), G11C 17/12 (2006.01), H01L 27/112 (2006.01)
Applicants:
Inventors:
Priority Data:
962572 20.11.1978 US
Title (EN) ROM MEMORY CELL WITH 2N FET CHANNEL WIDTHS
(FR) CELLULE DE MEMOIRE ROM AVEC 2N LARGEURS DE CANAUX TEC
Abstract: front page image
(EN)A read-only memory includes an array of field effect transistors (111, 112, ..., mk). Each field effect transistor has a channel width selected from 2n possible widths (n > 1) to provide one of 2n possible output voltages upon sensing. The output voltage is applied to a set of 2n - 1 sense amplifiers, each of which is selectively activated at a separate one of 2n - 1 voltage levels intermediate two adjacent values of the 2n output voltages. The sense amplifier outputs drive a logic circuit (104) providing n binary outputs, one of which may be selected by a decoder (105).
(FR)Une memoire fixe comprend un ensemble de transistors a effet de champ (111, 112..., mk). Chaque transistor a effet de champ possede une largeur de canal selectionne parmi 2n largeurs possibles (n > 1) pour obtenir une des 2n tensions de sortie possibles lors de la detection. La tension de sortie est applique a un groupe deux 2n-1 amplificateurs de detection, chacun de ces amplificateurs etant active de maniere selective a un niveau parmi les 2n-1 niveaux de tension intermediaire entre deux valeurs adjacentes des 2n tensions de sortie. Les sorties des amplificateurs de detection agissent sur un circuit logique (104) produisant n sorties binaires, dont l"une peut etre selectionnee par un decodeur (105).
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)