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Machine translation
1. (WO1980000522) METHOD FOR PRODUCING A SEMI-CONDUCTOR ELEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1980/000522    International Application No.:    PCT/DE1979/000096
Publication Date: 20.03.1980 International Filing Date: 29.08.1979
IPC:
G01R 31/265 (2006.01), H01L 21/265 (2006.01), H01L 21/268 (2006.01), H01L 21/66 (2006.01)
Applicants:
Inventors:
Priority Data:
2837749 30.08.1978 DE
Title (EN) METHOD FOR PRODUCING A SEMI-CONDUCTOR ELEMENT
(FR) PROCEDE DE FABRICATION D"UN ELEMENT SEMI-CONDUCTEUR
Abstract: front page image
(EN)Method for producing a semi-conductor element particularly a high frequency transistor of the bipolar type or of the high resistance type with at least one surface area (2) formed with a given type of conductivity by depositing doping materials. The repartition of the doping material and the desire conductivity are obtained accurately within the said element. For this purpose and while the surface of the element is submitted by means of an intensive optical radiation to a thermal treatment changing the repartition of the doping material respectively the conductivity, the electrical properties of a test pattern (3) formed within a portion of the surface of the semi-conductor body are measured and the treatment is immediately stopped after the electrical properties reach a given value.
(FR)Procede pour fabriquer un element semi-conducteur en particulier un transistor a haute frequence du type bipolaire ou a haute resistance avec au moins une zone de surface (2) formee d"un type donne de conductivite par l"apport de substance dopante. On obtient avec precision dans l"element mentionne la distribution de la substance dopante et la conductivite souhaitee. Dans ce but et pendant que la surface de l"element est soumise au moyen d"un rayonnement optique intensif a un traitement thermique modifiant la distribution de la substance dopante respectivement la conductivite on mesure les proprietes electriques d"une figure de test (3) formee dans une portion de la surface du corps semi-conducteur et interrompt le traitement aussitot que les proprietes electriques atteignent une valeur donnee.
Designated States:
Publication Language: German (DE)
Filing Language: German (DE)