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1. WO1980000496 - NONCONTACTING MEASUREMENT OF HALL EFFECT IN A WAFER

Publication Number WO/1980/000496
Publication Date 20.03.1980
International Application No. PCT/US1979/000607
International Filing Date 14.08.1979
IPC
G01R 33/12 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
12Measuring magnetic properties of articles or specimens of solids or fluids
G01R 31/265 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
265Contactless testing
CPC
G01R 31/265
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
265Contactless testing
G01R 33/1253
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
12Measuring magnetic properties of articles or specimens of solids or fluids
1253Measuring galvano-magnetic properties
Applicants
Inventors
Priority Data
93551821.08.1978US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) NONCONTACTING MEASUREMENT OF HALL EFFECT IN A WAFER
(FR) MESURE, SANS CONTACT, DE L"EFFET HALL DANS UNE TRANCHE
Abstract
(EN)
The magnitude and sign of the Hall angle of the material of a semiconductor wafer (13) are measured by a combined capacitive and inductive coupling technique which does not require physically contacting the wafer (13), thus avoiding possible physical damage to the wafer. An rf signal is applied to a pair of concentric circular planar electrodes (11, 12) adjacent to the wafer (13), thus capacitively coupling a radial rf current into the wafer. A magnetic field applied (magnet 14) perpendicular to the wafer produces a circular component of rf current because of the Hall effect. This circular rf current produces an axial rf magnetic field which couples to a pickup coil (15). The pickup signal is amplified (4g) and detected (49) to produce an output signal related to the sign and magnitude of the Hall angle of the wafer material.
(FR)
La grandeur et le signe de l"angle de Hall du materiau d"une tranche semi-conductrice (13) sont mesures par une technique de couplage capacitatif et inductif qui ne necessite pas le contact physique avec la tranche (13), eliminant ainsi toute deterioration physique eventuelle de la tranche. Un signal haute frequence (rf) est appliquee a une paire concentrique d"electrodes planes circulaires (11, 12) adjacentes a la tranche (13), couplant ainsi de maniere capacitative un courant rf radial dans la tranche. Un champ magnetique applique (aimant 14) perpendiculairement a la tranche produit une composante du courant rf a cause de l"effet Hall. Ce courant circulaire rf produit un champ magnetique rf axial qui se couple avec une bobine de reception (15). Le signal de reception est amplifie (48) et detecte (49) pour produire un signal de sortie en relation avec le signe et la grandeur de l"angle de Hall du materiau de la tranche.
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