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Machine translation
1. (WO1980000283) THYRISTOR WITH AMPLIFIER GATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1980/000283    International Application No.:    PCT/EP1979/000053
Publication Date: 21.02.1980 International Filing Date: 12.07.1979
IPC:
H01L 29/10 (2006.01), H01L 29/74 (2006.01)
Applicants:
Inventors:
Priority Data:
2830735 13.07.1978 DE
Title (EN) THYRISTOR WITH AMPLIFIER GATE
(FR) TYHRISTOR AVEC PORTE AMPLIFICATRICE
Abstract: front page image
(EN)The thyristor is provided with an amplifier gate having a short release time and small switching loss as well as a high admissible speed for current and voltage rises. The incorporated auxiliary thyristor system is always triggered before the main thyristor system. A p+ formation (3) is formed at the surface of a semi conductor body and at the vicinity of the controlled zone of the base (6). This formation is located between the auxiliary transmitter (1) and the main transmitter (2). This zone touches the edge of the portion of the main transmitter which faces the auxiliary transmitter or engages such edge while forming with it a transition range p+ n+.
(FR)Le thyristor muni d"une porte amplificatrice avec un temps de liberation faible et des pertes de commutation peu importantes ainsi qu"une vitesse admissible de montee de courant et de tension importante. Le systeme de thyristor auxiliaire incorpore est constamment declenche avant le systeme de thyristor principal. Une formation p+ (3) est formee a la surface d"un corps semi-conducteur et au voisinage de la zone de commande de la base (6). Cette formation se situe entre l"emetteur auxiliaire (1) et l"emetteur principal (2). Cette zone touche la bordure de la partie de l"emetteur principal qui est tournee vers l"emetteur auxiliaire ou bien la penetre tout en formant avec elle un domaine de transition p+ n+.
Designated States:
Publication Language: German (DE)
Filing Language: German (DE)