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Machine translation
1. (WO1980000079) SILICON NITRIDE HAVING HIGH TEMPERATURE AND METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1980/000079    International Application No.:    PCT/US1979/000406
Publication Date: 24.01.1980 International Filing Date: 13.06.1979
IPC:
C04B 35/584 (2006.01), C04B 35/593 (2006.01)
Applicants:
Inventors:
Priority Data:
916334 15.06.1978 US
Title (EN) SILICON NITRIDE HAVING HIGH TEMPERATURE AND METHOD
(FR) NITRURE DE SILICIUM AYANT UNE RESISTANCE ELEVEE AUX HAUTES TEMPERATURES ET METHODE DE FABRICATION
Abstract: front page image
(EN)A Si3N4 polycrystalline ceramic body consisting essentially of a first phase of Si3N4 and a second intergranular phase comprising SiO2 and a densifying additive, wherein the intergranular phase is substantially completely crystalline. The Si3N4 body is prepared by sintering a body of particulate material which is free of glass forming impurities or sintering and heat treating a body of particulate material which contains glass forming impurities.
(FR)Un corps en ceramique polycristalline Si3N4 comprend essentiellement une premiere phase de Si3N4 et une seconde phase intergranulaire consistant en SiO2 et en un additif de densification, la phase intergranulaire etant sensiblement completement cristalline. Le corps Si3N4 est prepare par frittage d"un materiau particulaire ne presentant pas d"impuretes de formation de verre ou par frittage ou traitement thermique d"un materiau particulaire contenant des impuretes de formation de verre.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)