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Machine translation
1. (WO1979000968) HIGH MOBILITY MULTILAYERED HETEROJUNCTION DEVICES EMPLOYING MODULATED DOPING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1979/000968    International Application No.:    PCT/US1979/000230
Publication Date: 15.11.1979 International Filing Date: 13.04.1979
IPC:
H01L 21/203 (2006.01), H01L 29/15 (2006.01), H01L 29/778 (2006.01)
Applicants:
Inventors:
Priority Data:
899402 24.04.1978 US
Title (EN) HIGH MOBILITY MULTILAYERED HETEROJUNCTION DEVICES EMPLOYING MODULATED DOPING
(FR) DISPOSITIFS D"HETEROJONCTION MULTICOUCHES A GRANDE MOBILITE UTILISANT UN DOPAGE MODULE
Abstract: front page image
(EN)The mobility of a relatively narrow bandgap semiconductor material can be significantly enhanced by incorporating it into a multilayered structure (10) comprising a first plurality of layers (12) of a relatively narrow bandgap form of the material and a second plurality of wider bandgap semiconductor layers (14) interleaved with and contiguous with the first plurality. The wide bandgap and narrow bandgap layers are substantially lattice-matched to one another, and the wide bandgap layers are doped such that its product of impurity concentration and thickness is greater than the same product in the narrow bandgap layers. The fabrication of the structure by molecular beam epitaxy (MBE) to enhance the mobility of GaAs is specifically described. In this case, the narrow bandgap layers (12) comprise GaAs and are unintentionally doped to about 1014/cm3, whereas the wide bandgap layers (14) comprise AlGaAs doped n-type to about 1016 to 1018/cm3. The incorporation of this structure in an FET is also described.
(FR)La mobilite d"un materiau semi-conducteur a espace de bande relativement etroit peut etre amelioree considerablement en l"incorporant dans une structure multicouche (10) comprenant une premiere pluralite de couches (12) de materiau a espace de bande relativement etroit et une seconde pluralite de couches a semi-conducteurs a espace de bande plus large (14) intercalees de maniere contigue avec les couches de la premiere pluralite. Les reseaux des couches a espace de bande large et a espace de bande etroit correspondant les uns aux autres, et les couches a espace de bande large sont dopees de sorte que leur produit de concentration en impuretes et d"epaisseur soit superieur au meme produit dans les couches a espace de bande etroit. La fabrication de la structure par epitaxie a faisceau moleculaire (MBE) pour ameliorer la mobilite du GaAs est decrite de facon detaillee. Dans ce cas, les couches a espace de bande etroit (12) consistent en GaAs et sont inintentionnellement dopees a environ 1014/cm3, tandis que les couches a espace de bande large (14) consistent en AlGaAs du type n dopees a environ 1016 a 1018/cm3. L"incorporation de cette structure dans un TEC est egalement decrite.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)