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1. (WO1979000914) MEMORY DEVICE
Latest bibliographic data on file with the International Bureau
Pub. No.: WO/1979/000914 International Application No.: PCT/US1979/000178
Publication Date: 15.11.1979 International Filing Date: 19.03.1979
IPC:
G06F 13/42 (2006.01) ,G11C 19/28 (2006.01) ,G11C 5/00 (2006.01) ,G11C 5/06 (2006.01) ,H03K 17/30 (2006.01)
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
13
Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
38
Information transfer, e.g. on bus
42
Bus transfer protocol, e.g. handshake; Synchronisation
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
19
Digital stores in which the information is moved stepwise, e.g. shift registers
28
using semiconductor elements
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
5
Details of stores covered by group G11C11/63
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
5
Details of stores covered by group G11C11/63
06
Arrangements for interconnecting storage elements electrically, e.g. by wiring
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
30
Modifications for providing a predetermined threshold before switching
Applicants:
Inventors:
Priority Data:
89532811.04.1978US
Title (EN) MEMORY DEVICE
(FR) DISPOSITIF DE MEMOIRE
Abstract:
(EN) A memory device (10) includes a circuit for reducing the number of pins or external terminals on the memory device (10). A threshold detector (49) within the circuit detects the difference in voltage between signals applied at two external pins (C0, F0). A clocking signal at one pin (C0) provides, in addition to a synchronizing function, a memory device select function, and a signal at the other pin (F0) provides memory mode select as well as memory address, data input and data output functions. Switching transistors (24, 28) controlled by the output of the threshold detector (40) connect the external pins (C0, F0) to the power and ground terminals of an internal power supply (16) so that the signals at the two external pins (C0, F0) also provide the power and ground signals to the memory device (10).
(FR) Une dispositif de memoire (10) comprend un circuit pour reduire le nombre de broches ou bornes externes sur le dispositif de memoire (10). Un detecteur de seuil (40) inclus dans le circuit detecte la difference de tension entre les signaux appliques a deux broches externes (C0, F0). Un signal d"horloge en une broche (C0) exerce, en plus d"une fonction de synchronisation, une fonction de selection du dispositif de memoire, et un signal a l"autre broche (F0) exerce des fonctions de selection du mode de la memoire et adresse de memoire, ainsi que la sortie et l"entree des donnees. Des transistors de commutation (24, 28) commandes par la sortie du detecteur de seuil (40) connectent les broches externes (C0, F0) aux bornes de puissance et de terre d"une alimentation de puissance interne (16) de sorte que les signaux aux broches externes (C0, F0) produisent aussi les signaux de puissance et de terre au dispositif de memoire (10).
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)