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1. (WO1979000900) LOW-DENSITY PATTERN IN A PHOTORESIST
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1979/000900 International Application No.: PCT/US1979/000191
Publication Date: 15.11.1979 International Filing Date: 26.03.1979
IPC:
H01J 37/317 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30
Electron-beam or ion-beam tubes for localised treatment of objects
317
for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
Applicants:
Inventors:
Priority Data:
89442007.04.1978US
Title (EN) LOW-DENSITY PATTERN IN A PHOTORESIST
(FR) MODELE A FAIBLE DENSITE DANS UN CACHE PHOTOGRAPHIQUE
Abstract:
(EN) By modifying the raster scanning mode of operation of an electron beam exposure system, it is practicable to directly define low density features (100-102) in a relatively insensitive positive photoresist (10) that exhibits high resolution and good processing characteristics. As a result, it is feasible to utilize such a system as an adjunct in what is otherwise a photolithographic fabrication process to define certain critical features of a micro-miniature device.
(FR) En modifiant le mode d"exploration a trame du fonctionnement d"un systeme d"exposition a faisceau electronique, il est possible de definir directement les zones caracteristiques de faible densite (100-102) dans un cache photographique positif relativement insensible (10) qui possede une grande resolution et de bonnes caracteristiques de traitement. Il en resulte qu"un tel systeme peut etre utilise comme complement dans ce qui constituerait autrement un procede de fabrication photolitographique pour definir certaines caracteristiques critiques d"un dispositif microminiature.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)