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Machine translation
1. (WO1979000813) SHALLOW-HOMOJUNCTION SOLAR CELLS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1979/000813    International Application No.:    PCT/US1979/000181
Publication Date: 18.10.1979 International Filing Date: 21.03.1979
IPC:
H01L 31/068 (2006.01)
Applicants:
Inventors:
Priority Data:
889078 22.03.1978 US
Title (EN) SHALLOW-HOMOJUNCTION SOLAR CELLS
(FR) CELLULES SOLAIRES A HOMOJONCTION SUPERFICIELLE
Abstract: front page image
(EN)Improvements in shallow-homojunction solar cells based upon a plurality of layers of a direct gap semi conductor material such as GaAs, as well as their fabrication, are disclosed. The shallow-homojunction solar cells have a n+/p/p+ structure (26, 24, 22) in which the n+ top layer (26) is limited to a thickness which permits significant carrier generation to occur in a lower semiconductor layer (24). An antireflection coating (28) is applied over the n+ top layer (26), and a particularly preferred method for applying the antireflection coating is by anodization. These solar cells can be grown on relatively inexpensive substrates, if desired, such as silicon or germanium.
(FR)Ameliorations aux cellules solaires a homojonction superficielle formees par une pluralite de couches de materiau semi-conducteur a espace d"interaction directe tel que GaAs, ainsi que leur fabrication. Les cellules solaires a homojonction superficielle possedent une structure n+/p/p+ (26, 24, 22) dans laquelle la couche superieure n+ (26) est limitee en epaisseur, ce qui permet d"avoir une activite porteuse importante au niveau de la couche semi-conductrice inferieure (24). Un revetement antireflechissant (28) est applique sur la couche superieure n+ (26), application realisee, de preference, par traitement anodique. Ces cellules solaires peuvent etre produites sur des substrats relativement peu couteux tels que le silicium ou le germanium.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)