Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO1979000736) TRANSISTORS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1979/000736 International Application No.: PCT/JP1979/000059
Publication Date: 04.10.1979 International Filing Date: 09.03.1979
IPC:
H01L 23/522 (2006.01) ,H01L 29/08 (2006.01) ,H01L 29/417 (2006.01) ,H01L 29/73 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
522
including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
08
with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
417
carrying the current to be rectified, amplified or switched
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
73
Bipolar junction transistors
Applicants:
Inventors:
Priority Data:
78/2725510.03.1978JP
Title (EN) TRANSISTORS
(FR) TRANSISTORS
Abstract:
(EN) A transistor having a base region in which a plurality of emitter regions are provided. These emitter regions are provided therein resistor regions acting as stabilizing resistance, said resistor regions being reversed in conductive type with respect to that of the emitter regions. These resistor regions are connected together by a common emitter-wiring electrode and further each connected to its corresponding emitter region. The emitter regions are aligned on a predetermined line such that conductive means connecting each of the resistor regions with its corresponding emitter region may be arranged on a chip without intersecting with the emitter-wiring electrode, while the resistor regions are formed in the emitter regions so as to intersect with said predetermined line.
(FR) Transistor ayant une region de base dans laquelle se trouve une pluralite de zones d"emetteur. Ces zones d"emetteur se trouvent dans des zones de resistance ayant le role de resistance stabilisatrice, ces zones de resistance ayant une conductivite contraire aux zones d"emetteur. Ces zones de resistance sont connectees les unes aux autres par une electrode emettrice de connexion, chacune de ces zones de resistance etant aussi connectee a sa zone d"emetteur correspondante. Les zones d"emetteur sont alignees sur une ligne predeterminee telle que des moyens conducteurs etablissant la connexion entre chacune des zones de resistance et leur zone d"emetteur correspondante, puissent etre disposes sur une microplaquette sans intersection avec l"electrode emettrice de connexion, tandis que les zones de resistance sont formees dans les zones d"emetteur de maniere a ce qu"elles intersectent ladite ligne predeterminee.
Designated States:
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
US4835588