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Machine translation
1. (WO1979000724) AMORPHOUS SEMICONDUCTORS EQUIVALENT TO CRYSTALLINE SEMICONDUCTORS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1979/000724    International Application No.:    PCT/US1979/000134
Publication Date: 04.10.1979 International Filing Date: 02.03.1979
IPC:
H01L 21/205 (2006.01), H01L 31/20 (2006.01)
Applicants:
Inventors:
Priority Data:
884664 08.03.1978 US
Title (EN) AMORPHOUS SEMICONDUCTORS EQUIVALENT TO CRYSTALLINE SEMICONDUCTORS
(FR) SEMI-CONDUCTEURS AMORPHES EQUIVALENTS A DES SEMI-CONDUCTEURS CRISTALLINS
Abstract: front page image
(EN)A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises forming an amorphous semiconductor film (65, 65", 65"", 65"""), preferably by vaporizing selicon (6) or the like in an evacuated space (4a) and condensing the same on a substrate (7, 62, 72, 88, 88") in such space, and preferably at the same time, or subsequently, introducing one and preferably at least two or three compensating agents (39, 39") into the film, like activated hydrogen (39) and fluorine (39"), in amounts which substantially reduce or eliminate the localized states in the energy gap thereof so that greatly increased diffusion lengths for solar cell applications is obtained and dopants (6") can be effectively added to product p or n amorphous semiconductor films so that the films function like similar crystalline materials.
(FR)Methode de fabrication d"un film semi-conducteur amorphe ou semblable ayant des proprietes de photoconductivite et/ou autres voulues consistant a former un film semi-conducteur amorphe (65, 65", 65"", 65"""), de preference par vaporisation de silicium (6) ou autre dans un espace sous vide (4a) et par condensation de celui-ci sur un substrat (7, 62, 72, 88, 88") dans ce milieu et de preference en meme temps, ou ulterieurement, a inclure un, de preference, au moins deux ou trois agents de compensation (39, 39") dans le film, tels que l"hydrogene active (39) et le fluor (39"), en quantites qui reduisent substantiellement ou eliminent les etats localises dans l"ecart energetique du film de sorte que l"on obtient des longueurs de diffusion nettement plus grandes applicables aux cellules solaires et des agents de dopage (6") peuvent etre ajoutes pour produire des films semi-conducteurs amorphes de type p ou de type n de maniere a ce que les films fonctionnent comme des materiaux cristallins.
Designated States:
Publication Language: English (EN)
Filing Language: English (EN)