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1. WO2003097892 - SYSTEM AND APPARATUS FOR CONTROL OF SPUTTER DEPOSITION PROCESS

Publication Number WO/2003/097892
Publication Date 27.11.2003
International Application No. PCT/US2003/015302
International Filing Date 16.05.2003
Chapter 2 Demand Filed 16.12.2003
IPC
C23C 14/35 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
CPC
C23C 14/35
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
H01J 37/3405
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3402using supplementary magnetic fields
3405Magnetron sputtering
Applicants
  • APPLIED FILMS CORPORATION [US]/[US]
Inventors
  • STOWELL, Michael, W. Jr.
Agents
  • STORM, Paul, V.
Priority Data
10/438,38015.05.2003US
60/381,48217.05.2002US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SYSTEM AND APPARATUS FOR CONTROL OF SPUTTER DEPOSITION PROCESS
(FR) SYSTEME ET APPAREIL POUR LA COMMANDE D'UN PROCEDE DE PULVERISATION CATHODIQUE
Abstract
(EN)
A method and apparatus for sputter deposition in which both a pulsed DC power supply and an RF power supply apply power to the target in the sputter deposition equipment. The pulsed DC power supply provides an on cycle where power is applied to the target, and an off cycle, in which a reverse polarity is applied to the target. The application of the reverse polarity has the effect of removing any charge that may have built up on the surface of the target. This reduces the likelihood of arcing occurring on the surface of the target, which can degrade the quality of the film being deposited on the substrate. By applying RF power simultaneously with the pulsed DC power to the target, the ionization efficiency on the target surface is increased. This results in a greater amount of material being removed from the target surface more quickly.
(FR)
L'invention concerne un procédé et un appareil pour la pulvérisation cathodique, dans lesquels une alimentation CC pulsée et une alimentation RF appliquent de l'énergie sur la cible se trouvant dans l'équipement de pulvérisation cathodique. L'alimentation CC pulsée produit un cycle de marche dans lequel l'énergie est appliquée sur la cible, et un cycle d'arrêt dans lequel une polarité inverse est appliquée sur la cible. L'application de la polarité inverse a pour effet de supprimer toute charge susceptible de s'être accumulée sur la surface de la cible. Ainsi, on réduit la probabilité de formation d'arc sur la surface de la cible, pouvant détruire la qualité de la pellicule en cours de dépôt sur le substrat. L'application simultanée d'énergie RF et d'énergie CC pulsée sur la cible, augmente l'efficacité d'ionisation sur la surface de la cible. Ainsi, on enlève plus rapidement une quantité de matière plus importante de la surface cible.
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