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1. US20130079230 - IONICALLY CONTROLLED THREE-GATE COMPONENT

Office United States of America
Application Number 13703225
Application Date 03.06.2011
Publication Number 20130079230
Publication Date 28.03.2013
Publication Kind A1
IPC
H01L 39/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
22Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices
CPC
H01L 39/223
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
22Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices
223Josephson-effect devices
Applicants Poppe Ulrich
Weber Dieter
Divin Yuriy
Faley Mikhail
Inventors Poppe Ulrich
Weber Dieter
Divin Yuriy
Faley Mikhail
Title
(EN) IONICALLY CONTROLLED THREE-GATE COMPONENT
Abstract
(EN)

A three-port component comprises a source electrode, a drain electrode, and a channel, which is corrected between the source electrode and the drain electrode and which is made of a material haying an electronic conductivity that can be varied by supplying and/or removing ions. The three-port component comprises an ion reservoir, which is in contact with a gate electrode, and which is connected to the channel so that the reservoir is able to exchange ions with the channel when a potential is applied to the gate electrode. Information can be stored on the three-port component by distributing the total number of ions, which are present in the ion reservoir and the channel, between the ion reservoir and the channel. The distribution of ions in the channel and the ion reservoir changes when, and only when, a corresponding driving potential is applied to the gate electrode. Thus, in contrast to RRAMS, there is no time-voltage dilemma.