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1. (US20130079230) IONICALLY CONTROLLED THREE-GATE COMPONENT

Office : United States of America
Application Number: 13703225 Application Date: 03.06.2011
Publication Number: 20130079230 Publication Date: 28.03.2013
Publication Kind : A1
Prior PCT appl.: Application Number:PCTDE2011001167 ; Publication Number: Click to see the data
IPC:
H01L 39/22
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39
Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
22
Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices
CPC:
H01L 39/223
Applicants: Poppe Ulrich
Weber Dieter
Divin Yuriy
Faley Mikhail
Inventors: Poppe Ulrich
Weber Dieter
Divin Yuriy
Faley Mikhail
Priority Data: 10 2010 026 098.3 05.07.2010 DE
Title: (EN) IONICALLY CONTROLLED THREE-GATE COMPONENT
Abstract: front page image
(EN)

A three-port component comprises a source electrode, a drain electrode, and a channel, which is corrected between the source electrode and the drain electrode and which is made of a material haying an electronic conductivity that can be varied by supplying and/or removing ions. The three-port component comprises an ion reservoir, which is in contact with a gate electrode, and which is connected to the channel so that the reservoir is able to exchange ions with the channel when a potential is applied to the gate electrode. Information can be stored on the three-port component by distributing the total number of ions, which are present in the ion reservoir and the channel, between the ion reservoir and the channel. The distribution of ions in the channel and the ion reservoir changes when, and only when, a corresponding driving potential is applied to the gate electrode. Thus, in contrast to RRAMS, there is no time-voltage dilemma.


Also published as:
EP2591514JP2013535805CN102959750WO/2012/003821