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1. US20120264251 - Separation type unit pixel of 3-dimensional image sensor and manufacturing method thereof

Office United States of America
Application Number 13531530
Application Date 23.06.2012
Publication Number 20120264251
Publication Date 18.10.2012
Grant Number 08669132
Grant Date 11.03.2014
Publication Kind B2
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 21/00
CPC
H01L 27/14634
H01L 27/14609
H01L 27/14623
H01L 27/14627
H01L 27/1464
H01L 27/14643
Applicants Lee Do Young
Siliconfile Technologies Inc.
Inventors Lee Do Young
Agents Kile Park Reed & Houtteman PLLC
Priority Data 10-2005-0056036 28.06.2005 KR
Title
(EN) Separation type unit pixel of 3-dimensional image sensor and manufacturing method thereof
Abstract
(EN)

A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer.