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1. US20120217651 - Through substrate vias

Office
United States of America
Application Number 13468609
Application Date 10.05.2012
Publication Number 20120217651
Publication Date 30.08.2012
Grant Number 08796138
Grant Date 05.08.2014
Publication Kind B2
IPC
H01L 21/768
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
H01L 23/48
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leadsĀ or terminal arrangements
CPC
H01L 21/76898
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76898formed through a semiconductor substrate
H01L 23/481
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
481Internal lead connections, e.g. via connections, feedthrough structures
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H01L 2924/09701
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
095with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
097Glass-ceramics, e.g. devitrified glass
09701Low temperature co-fired ceramic [LTCC]
Applicants Cotte John Michael
International Business Machiness Corporation
Jahnes Christopher Vincent
Webb Bucknell Chapman
Inventors Cotte John Michael
Jahnes Christopher Vincent
Webb Bucknell Chapman
Agents Morris Daniel P.
Ryan, Mason & Lewis, LLP
Title
(EN) Through substrate vias
Abstract
(EN)

Methods and apparatus for forming through-vias are presented, for example, a method for forming a via in a portion of a semiconductor wafer comprising a substrate. The method comprises forming a trench surrounding a first part of the substrate such that the first part is separated from a second part of the substrate, forming a hole through the substrate within the first part, and forming a first metal within the hole. The trench extends through the substrate. The first metal extends from a front surface of the substrate to a back surface of the substrate. The via comprises the hole and the first metal.