The active matrix substrate
3 is constituted by a glass substrate
31, the scanning signal lines
16
a and
16
b and the retention capacitor wire
18
p which are provided on the glass substrate
31, and a gate insulation film
22 which is provided so as to cover the scanning signal lines
16
a and
16
b and the retention capacitor wire
18
p. On the gate insulation film
22, a semiconductor layer
24 (i layer and n+ layer), a source electrode
8
a in contact with the n+ layer, the drain electrodes
9
a and
9
b, and the capacitor electrode
37
a are provided, and an inter-layer insulation film
51 is provided so as to cover these layer and electrodes. On the inter-layer insulation film
51, the pixel electrodes
17
a and
17
b are provided, and an alignment film (not illustrated) is further provided so as to cover these electrodes (pixel electrodes
17
a and
17
b). Note here that, the inter-layer insulation film
51 is hollowed out to have the contact hole
11
a, via which the pixel electrode
17
a and the capacitor electrode
37
a are connected to each other. Further, an end portion of the capacitor electrode
37
a overlaps the pixel electrode
17
b via the inter-layer insulation film
51 so as to form part of the coupling capacitor Cab (refer to
FIG. 1). Further, an end portion of the capacitor electrode
37
a overlaps the retention capacitor wire
18
p via the gate insulation film
22 so as to form part of the retention capacitor Cha (refer to
FIG. 1).