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1. (US20110197942) Thin-film thermo-electric generator and fabrication method thereof

Office : United States of America
Application Number: 13126076 Application Date: 09.12.2009
Publication Number: 20110197942 Publication Date: 18.08.2011
Grant Number: 09299907 Grant Date: 29.03.2016
Publication Kind : B2
Prior PCT appl.: Application Number:PCTCN2009075419 ; Publication Number: Click to see the data
IPC:
H01L 35/32
H01L 35/34
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
28
operating with Peltier or Seebeck effect only
32
characterised by the structure or configuration of the cell or thermo-couple forming the device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
34
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants: Ping Fan
ShenZhen University
Dongping Zhang
Zhuangghao Zjemg
Guangxing Liang
Inventors: Ping Fan
Dongping Zhang
Zhuangghao Zjemg
Guangxing Liang
Agents: Raymond Y. Chan
David and Raymond Patent Firm
Priority Data: 2009 1 0105172 20.01.2009 CN
Title: (EN) Thin-film thermo-electric generator and fabrication method thereof
Abstract: front page image
(EN)

For the thin-film thermo-electric generator and fabrication method of this invention, a P-type thermo-electric thin-film layer, an insulating thin-film layer and a N-type thermo-electric thin-film layer is deposited on a substrate to form a three-layer PN junction, multiple three-layer PN junctions in series are available, an insulating thin-film layer is provided between every to serial three-layer PN junctions, and electrodes are extracted from the substrate and the outermost thin-film layer of the last three-layer thin-film PN junctions. The present invention applies the deposition of P-type thermo-electric thin-film layer, an insulating thin-film layer and a N-type thereto-electric thin-film layer to form a three-layer PN junction, thus a thermo-electric generator is formed, during the deposition of the insulating thin-film layer, intentionally sheltering the substrate and one end of the deposited thin-film layer and depositing the P-type or N-type materials on the substrate and one end of the deposited thin-film layer directly, to form a connection of PN junction or a serial connection between two PN junction, the separate connection of the P-type or N-type materials is not required, simplifying the fabrication processes of the thin-film thermo-electric generator, owning to the function of the thin-film thermo-electric materials and serial connection structure of multiple three-layer PN junctions, the performance of the thin-film thermo-electric generator is greatly improved.


Also published as:
EP2381497JP2012516030WO/2010/083705