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1. US20110079769 - Nanometric MOS Transistor With Maximized Ration Between On-State Current and Off-State Current

Office United States of America
Application Number 11885900
Application Date 07.03.2006
Publication Number 20110079769
Publication Date 07.04.2011
Publication Kind A1
IPC
H01L 29/775
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
775with one-dimensional charge carrier gas channel, e.g. quantum wire FET
B82Y 99/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE  OR TREATMENT OF NANOSTRUCTURES
99Subject matter not provided for in other groups of this subclass
Applicants Cavassilas Nicolas
Inventors Cavassilas Nicolas
Priority Data 0550605 08.03.2005 FR
Title
(EN) Nanometric MOS Transistor With Maximized Ration Between On-State Current and Off-State Current
Abstract
(EN)

A MOS transistor having a gate length shorter than twice the de Broglie wavelength of the charge carriers in the channel material, wherein the cross-sectional area of the channel region is decreased in the vicinity of the drain region along at least one dimension to a value smaller than half said wavelength.