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1. US20100046283 - Magnetic random access memory and operation method of the same

Office United States of America
Application Number 12303821
Application Date 01.06.2007
Publication Number 20100046283
Publication Date 25.02.2010
Grant Number 07885095
Grant Date 08.02.2011
Publication Kind B2
IPC
G11C 11/00
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
C11C 11/14
G11C 11/02
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
G11C 11/14
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
14using thin-film elements
G11C 11/414
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
41forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
414for memory cells of the bipolar type
G11C 11/416
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
41forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
414for memory cells of the bipolar type
416Read-write circuits
Applicants NEC Corporation
Inventors Sakimura Noboru
Honda Takeshi
Sugibayashi Tadahiko
Agents Sughrue Mion, PLLC
Priority Data 2006-159353 08.06.2006 JP
Title
(EN) Magnetic random access memory and operation method of the same
Abstract
(EN)

A magnetic random access memory of the present invention includes: a plurality of first wirings and a plurality of second wirings extending in a first direction; a plurality of third wirings and a plurality of fourth wirings extending in a second direction; and a plurality of memory cells provided at intersections of the plurality of first wirings and the plurality of third wirings, respectively. Each of the plurality of memory cells includes: a first transistor and a second transistor connected in series between one of the plurality of first wirings and one of the plurality of second wirings and controlled in response to a signal on one of the plurality of third wirings, a first magnetic resistance element having one end connected to a write wiring through which the first transistor and the second transistor are connected, and the other end grounded; and a second magnetic resistance element having one end connected to the write wiring, and the other end connected to the fourth wiring.

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