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1. US20100140807 - Insulating film material, multilayer wiring board and production method thereof, and semiconductor device and production method thereof

Office
United States of America
Application Number 12648804
Application Date 29.12.2009
Publication Number 20100140807
Publication Date 10.06.2010
Grant Number 08580907
Grant Date 12.11.2013
Publication Kind B2
IPC
C08G 77/60
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
77Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
60in which all the silicon atoms are connected by linkages other than oxygen atoms
Applicants Kobayashi Yasushi
Fujitsu Limited
Nakata Yoshihiro
Ozaki Shirou
Inventors Kobayashi Yasushi
Nakata Yoshihiro
Ozaki Shirou
Agents Westerman, Hattori, Daniels & Adrian, LLP
Priority Data JP07063586 06.07.2007 WO
Title
(EN) Insulating film material, multilayer wiring board and production method thereof, and semiconductor device and production method thereof
Abstract
(EN)

An insulating film material, which contains a polycarbosilane compound expressed by the following structural formula 1:

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where R1 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; R2 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; n is an integer of 5 to 5,000.