Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (US20090121199) In Sm oxide sputtering target

Office : United States of America
Application Number: 11995640 Application Date: 21.06.2006
Publication Number: 20090121199 Publication Date: 14.05.2009
Grant Number: 7648657 Grant Date: 19.01.2010
Publication Kind : B2
Prior PCT appl.: Application Number:JP06312412 ; Publication Number: Click to see the data
IPC:
H01B 1/08
C23C 14/08
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
1
Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
06
mainly consisting of other non-metallic substances
08
oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
08
Oxides
Applicants: Idemitsu Kosan Co., Ltd.
Inventors: Inoue Kazuyoshi
Tanaka Nobuo
Tanaka, legal representative Tokie
Tomai Shigekazu
Matsubara Masato
Kaijo Akira
Yano Koki
Agents: Millen, White, Zelano &; Branigan, P.C.
Priority Data: 2005207513 15.07.2005 JP
2005258740 07.09.2005 JP
Title: (EN) In Sm oxide sputtering target
Abstract: front page image
(EN)

A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements.


Also published as:
KR1020080026169EP1905864CN101223296JP5089386WO/2007/010702