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1. (US20080265379) Laser diode orientation on mis-cut substrates

Office : United States of America
Application Number: 11994406 Application Date: 27.06.2006
Publication Number: 20080265379 Publication Date: 30.10.2008
Grant Number: 07884447 Grant Date: 08.02.2011
Publication Kind : B2
Prior PCT appl.: Application Number:PCTUS2006024846 ; Publication Number: Click to see the data
IPC:
H01L 29/04
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
04
characterised by their crystalline structure, e.g. polycrystalline, cubicĀ or particular orientation of crystalline planes
Applicants: Cree, Inc.
Inventors: Brandes George R.
Vaudo Robert P.
Xu Xueping
Agents: Gustafson Vincent K.
Intellectual Property/Technology Law
Priority Data:
Title: (EN) Laser diode orientation on mis-cut substrates
Abstract: front page image
(EN)

A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate (201). In an illustrative implementation, a laser diode is oriented on a GaN substrate (201) wherein the GaN substrate includes a GaN (0001) surface off-cut from the <0001> direction predominantly towards either the <1120> or the <1100> family of directions. For a <1120> off-cut substrate, a laser diode cavity (207) may be oriented along the <1100> direction parallel to lattice surface steps (202) of the substrate (201) in order to have a cleaved laser facet that is orthogonal to the surface lattice steps. For <1100> off-cut substrate, the laser diode cavity may be oriented along the <1100> direction orthogonal to lattice surface steps (207) of the substrate (201) in order to provide a cleave laser facet that is aligned with the surface lattice steps.


Also published as:
JP2009500862DE112006001847WO/2007/008394