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1. US20080210298 - Combined etching and doping media for silicon dioxide layers and underlying silicon

Office United States of America
Application Number 11995449
Application Date 13.06.2006
Publication Number 20080210298
Publication Date 04.09.2008
Grant Number 08088297
Grant Date 03.01.2012
Publication Kind B2
IPC
B PERFORMING OPERATIONS; TRANSPORTING
44
DECORATIVE ARTS
C
PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
1
Processes, not specifically provided for elsewhere, for producing decorative surface effects
22
Removing surface-material, e.g. by engraving, by etching
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
F
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES; INHIBITING CORROSION OF METALLIC MATERIAL; INHIBITING INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25247
1
Etching metallic material by chemical means
B44C 1/22
C23F 1/00
Applicants Merck Patent GmbH
Inventors Kuebelbeck Armin
Stockum Werner
Agents Millen, White, Zelano, Branigan, P.C.
Priority Data 10 2005 032 807 12.07.2005 DE
Title
(EN) Combined etching and doping media for silicon dioxide layers and underlying silicon
Abstract
(EN)

The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both for the etching of silicon dioxide layers and also for the doping of underlying silicon layers. The present invention also relates secondly to a process in which these media are employed.

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