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1. US20070279975 - Refreshing a phase change memory

Office United States of America
Application Number 11447821
Application Date 06.06.2006
Publication Number 20070279975
Publication Date 06.12.2007
Publication Kind A1
IPC
G11C 11/00
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Applicants HUDGENS STEPHEN J
Inventors Hudgens Stephen J.
Agents TROP PRUNER & HU, PC
Title
(EN) Refreshing a phase change memory
Abstract
(EN)

A phase change memory may be utilized in place of a dynamic random access memory in a processor-based system. In some embodiments, a chalcogenide material, used for the phase change memory, has relatively high crystallization speed so that it may be quickly programmed. Materials may be chosen which have high crystallization speed and corresponding poor data retention. The poor data retention may be compensated by providing a refresh cycle.

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