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1. (US20060220641) Device for sensing a magnetic field

Office : United States of America
Application Number: 10543982 Application Date: 31.01.2003
Publication Number: 20060220641 Publication Date: 05.10.2006
Grant Number: 7342396 Grant Date: 11.03.2008
Publication Kind : B2
Prior PCT appl.: Application Number:EP03001518 ; Publication Number: Click to see the data
IPC:
G01R 33/035
G01R 33/06
G01R 33/09
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33
Arrangements or instruments for measuring magnetic variables
02
Measuring direction or magnitude of magnetic fields or magnetic flux
035
using superconductive devices
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33
Arrangements or instruments for measuring magnetic variables
02
Measuring direction or magnitude of magnetic fields or magnetic flux
06
using galvano-magnetic devices
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33
Arrangements or instruments for measuring magnetic variables
02
Measuring direction or magnitude of magnetic fields or magnetic flux
06
using galvano-magnetic devices
09
Magneto-resistive devices
Applicants: Commissariat Energie Atomique
Elekta Neuromag Oy
Inventors: Pannetier Myriam
Fermon Claude
Simola Juha
Agents: Weingarten, Schurgin, Gagnebin &; Lebovici LLP
Priority Data: EP03001518 31.01.2003 WO
Title: (EN) Device for sensing a magnetic field
Abstract: front page image
(EN)

The device for sensing a magnetic field comprises a closed superconducting pick-up loop (1) having a path width (d) etched out of a single layer superconducting thin film and provided with a constriction (15) having a width (w) of narrow dimension smaller than the path width (d). The closed superconducting pick-up loop (1) constitutes a flux-to-field transformer (FFDT). At least one magnetoresistive element (2) is placed on top of or below the superconducting thin film, is isolated from the superconducting thin film by a thin insulating layer and is located so that an active part of the magnetoresistive element (2) is at the location of the constriction (15) and has a width equal to or less than the width of the constriction (15). The active part of the magnetoresistive element (2) is oriented so that the bias current in this active part is directed essentially along the constriction (15), orthogonally to the width of narrow dimension.


Also published as:
EP1588177JP2006514272CA2514869AU2003206904WO/2004/068158